IIB | IIIA | IVA | VA | VIA |
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Al | Si | P | S | |
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Ti2AlC
- Room Temperature Resistivity: 0.36μΩ- Electron Mobility (300K): 0.0090m/Vs - Hole Mobility (300K): 0.0082m/Vs - Conducting Electron Density: 1.0x1027/m3 - Hole Density: 1.0x1027/m3 - Density of States at Ef: 4.9/eVunit cell - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: V2AlC
- Room Temperature Resistivity: 0.26μΩ- Electron Mobility (300K): 0.0046m/Vs - Hole Mobility (300K): 0.0039m/Vs - Conducting Electron Density: 2.7x1027/m3 - Hole Density: 2.7x1027/m3 - Density of States at Ef: 7.5/eVunit cell - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Cr2AlC
- Room Temperature Resistivity: 0.74μΩ- Electron Mobility (300K): 0.0034m/Vs - Hole Mobility (300K): 0.0036m/Vs - Conducting Electron Density: 1.2x1027/m3 - Hole Density: 1.2x1027/m3 - Density of States at Ef: 14.5/eVunit cell - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Nb2AlC
- Room Temperature Resistivity: 0.39μΩ- Electron Mobility (300K): 0.0038m/Vs - Hole Mobility (300K): 0.0031m/Vs - Conducting Electron Density: 2.7x1027/m3 - Hole Density: 2.7x1027/m3 - Density of States at Ef: 5.1/eVunit cell - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ta2AlC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ti2AlN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ti3AlC2
- Room Temperature Resistivity: 0.39μΩ- Electron Mobility (300K): 0.0046-0.0042m/Vs - Hole Mobility (300K): 0.0054-0.0030m/Vs - Conducting Electron Density: 1.5-1.6x1027/m3 - Hole Density: 1.5-2x1027/m3 - Density of States at Ef: 3.8/eVunit cell - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ti4AlN3
- Room Temperature Resistivity: 2.61μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): 0.00034m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: 7.0x1027/m3 - Density of States at Ef: 6.9/eVunit cell - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ta4AlC3
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
Ti3SiC2
- Room Temperature Resistivity: 0.22μΩ- Electron Mobility (300K): 0.005m/Vs - Hole Mobility (300K): 0.006m/Vs - Conducting Electron Density: 2.5x1027/m3 - Hole Density: 2.5x1027/m3 - Density of States at Ef: 5/eVunit cell - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
V2PC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Nb2PC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
Ti2SC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Zr2SC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower:: Nb2SC0.4
- Room Temperature Resistivity: - Room Temperature Resistivity: μΩ - Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Hf2SC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
Zn | Ga | Ge | As | Se |
Ti2GaC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: V2GaC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Cr2GaC
- Room Temperature Resistivity- Effect of Temperature on Resistivity - Hall Coefficient - Magneto Resistance - Thermopower Nb2GaC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Mo2GaC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower:r Ta2GaC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower:r Ti2GaN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Cr2GaN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: V2GaN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower:r |
Ti2GeC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower:r V2GeC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Cr2GeC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ti3GeC2
- Room Temperature Resistivity: 0.26μΩ- Electron Mobility (300K): 0.009m/Vs - Hole Mobility (300K): 0.008m/Vs - Conducting Electron Density: 1.5x1027/m3 - Hole Density: 1.5x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
V2AsC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Nb2AsC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
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Cd | In | Sn | Sb | Te |
Ti2CdC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
Sc2InC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ti2InC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Zr2InC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Nb2InC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Hf2InC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Ti2InN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Zr2InN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower:r |
Ti2SnC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Zr2SnC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Nb2SnC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Hf2SnC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Hf2SnN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
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Tl | Pb | Bi | Po | |
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Ti2TlC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Zr2TlC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Hf2TlC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Zr2TlN
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
Ti2PbC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Zr2PbC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: Hf2PbC
- Room Temperature Resistivity: μΩ- Electron Mobility (300K): m/Vs - Hole Mobility (300K): m/Vs - Conducting Electron Density: x1027/m3 - Hole Density: x1027/m3 - Density of States at Ef: - Effect of Temperature on Resistivity - Hall Coefficient: - Magneto Resistance: - Thermopower: |
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