Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon

by Gogotsi, Y., Baek, C. and Kirscht, F.
Reference:
Y. Gogotsi, C. Baek, and F. Kirscht, "Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon", Semiconductor Science and Technology, vol. 14, no. 10, 1999, pp. 936.
Bibtex Entry:
@article{38,
   author = {Gogotsi, Y. and Baek, C. and Kirscht, F.},
   title = {Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon},
   journal = {Semiconductor Science and Technology},
   volume = {14},
   number = {10},
   pages = {936},
   ISSN = {0268-1242},
   DOI = {10.1088/0268-1242/14/10/310},
   year = {1999},
   date= {10/01}
   type = {Journal Article},
   url = https://nano.materials.drexel.edu/wp-content/papercite-data/pdf/38.pdf
}

Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon