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Brill, G., Smith, D. J., Chandrasekhar, D., Gogotsi, Y., Prociuk, A., & Sivananthan, S. (1999). Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEM. In Journal of Crystal Growth (Vols. 201–202, pp. 538–541). Elsevier BV. https://doi.org/10.1016/s0022-0248(98)01410-9 | PDF
Gogotsi, Y., Baek, C., & Kirscht, F. (1999). Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon. In Semiconductor Science and Technology (Vol. 14, Issue 10, pp. 936–944). IOP Publishing. https://doi.org/10.1088/0268-1242/14/10/310 | PDF
Gogotsi, Y., Miletich, T., Gardner, M., & Rosenberg, M. (1999). Microindentation device for in situ study of pressure-induced phase transformations. In Review of Scientific Instruments (Vol. 70, Issue 12, pp. 4612–4617). AIP Publishing. https://doi.org/10.1063/1.1150122 | PDF
Gogotsi, Y. G., Kailer, A., & Nickel, K. G. (1999). Transformation of diamond to graphite. In Nature (Vol. 401, Issue 6754, pp. 663–664). Springer Science and Business Media LLC. https://doi.org/10.1038/44323 | PDF
Suchanek, W. L., Yoshimura, M., & Gogotsi, Y. G. (1999). Stability of fullerenes under hydrothermal conditions. In Journal of Materials Research (Vol. 14, Issue 2, pp. 323–326). Springer Science and Business Media LLC. https://doi.org/10.1557/jmr.1999.0046 | PDF
A.J. Nanomaterials Institute Office: CAT 383
Prof. Yury Gogotsi – gogotsi@drexel.edu